RM-SYSTÉM»Události»Intel Reinvents Transistors Using New 3-D Structure
Intel Reinvents Transistors Using New 3-D Structure
10.05.2011 15:11
SANTA CLARA, Calif.--(BUSINESS WIRE)-- Intel Corporation today announced a significant breakthrough in the evolution of the transistor, the microscopic building block of modern electronics. For the first time since the invention of silicon transistors
over 50 years ago, transistors using a three-dimensional structure will be put into high-volume manufacturing. Intel will introduce a revolutionary 3-D transistor design called Tri-Gate, first disclosed by Intel in 2002, into high-volume manufacturing at the 22-nanometer (nm) node in an Intel chip codenamed "Ivy Bridge." A nanometer is one-billionth of a meter.
Přiložený dokument ke stažení
Press Release
RM-SYSTÉM, česká burza cenných papírů a.s.
Další zprávy
- Intel to Report Fourth-Quarter and Full-Year 2022 Financial Results (05.01.2023 13:09)
- Intel Reports Third-Quarter 2022 Financial Results (01.11.2022 16:56)
- Intel Corporation - to Report Third-Quarter 2022 Financial Results (07.10.2022 14:11)
- Intel Corporation - Quarterly Cash Dividend (19.09.2022 12:53)
- Intel Corporation - Q2 2022 Intel Corporation Earnings (03.08.2022 11:55)